onsemi NTMS4700N
Power MOSFET
FEATURES
● Ultra Low RDS(on) (at 4.5 VGS), Low Gate Resistance and Low QG● Optimized for High Side Control
APPLICATIONS
● High Speed Switching CapabilityAPPLICATIONS
V(BR)DSS 30 V RDS(on) TYP 6.0 mW @ 10 V 7.3 mW @ 4.5 V D ID MAX 14.5 A● Notebook Computer Vcore
APPLICATIONS
● NetworkAPPLICATIONS
● DC−DC ConvertersMAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain C rrent (Note 1) Current Steady State t v10 s Power Dissi Dissipation ation (Note 1) Steady State t v10 s Continuous Drain C Current t (N (Note t 2) Power Dissi Dissipation ation (Note 2) Pulsed Drain Current Steady y St t State TA = 25°C TA = 70°C TA = 25°C PD TA = 25°C 2.5 TA = 25°C TA = 70°C TA = 25°C PD IDM TJ, Tstg IS EAS ID 8.6 6.8 0.86 40 −55 to 150 2.5 280 W A °C A mJ A Symbol VDSS VGS ID Value 30 $20 11.5 9.2 14.5 1.56 W Unit V V A G S MARKING DIAGRAM/ PIN ASSIGNMENT 1 8 1 SO−8 CASE 751 STYLE 12 4700N A L Y W Source Source Source...