onsemi NTMS4705N
Power MOSFET
FEATURES
●ăLow RDS(on)●ăLow Gate Charge
●ăStandard SO-8 Single Package
●ăPb-Free Package is Available
APPLICATIONS
V(BR)DSS RDS(ON) TYP 8.0 mW @ 10 V 30 V 10.5 mW @ 4.5 V 12 A ID MAX (Note 1)●ăNotebooks, Graphics Cards
●ăSynchronous Rectification
●ăHigh Side Switch
●ăDC-DC Converters
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t v 10 s Power Dissipation (Note 1) Steady State t v 10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C tp = 10 ms PD IDM TJ, Tstg IS EAS ID TA = 25°C TA = 85°C TA = 25°C TA = 25°C PD Symbol VDSS VGS ID Value 30 ±20 10 7.2 12 1.52 2.3 7.4 5.3 0.85 36 -55 to 150 3.0 210 W A °C A mJ A W Unit V V A N-Channel D G S MARKING DIAGRAM/ PIN ASSIGNMENT 1 1 8 Drain Drain Drain Drain 4705N AYWWG G SO-8 CASE 751 STYLE 12 Source Source Source Gate Top View Operating Junction and Storage...