onsemi NTMS4801N
N-Channel Power MOSFET
| Part No. | NTMS4801N |
|---|---|
| Datasheet | NTMS4801N Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low RDS(on) to Minimize Conduction Losses● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● This is a Pb−Free Device
APPLICATIONS
● DC−DC Converters● Synchronous MOSFET
● Printers
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 9.9 A TA = 70°C 7.9 Power Dissipation RqJA (Note 1) TA = 25°C PD 1.41 W Continuous Drain TA = 25°C ID Current RqJA (Note 2) Steady TA = 70°C Power Dissipation RqJA State TA = 25°C PD (Note 2) 7.5 A 6.0 0.8 W Continuous Drain Current RqJA, t v 10 s (Note 1) TA = 25°C ID TA = 70°C 12 A 9.6 Power Dissipation RqJA, t v 10 s(Note 1) TA = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 30 V, VGS = 10 V, IL = 14 Apk, L = 1.0 mH,...
