onsemi NTMS4802N
Power MOSFET
| Part No. | NTMS4802N |
|---|---|
| Datasheet | NTMS4802N Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
30 V, 18 A, N−Channel, SO−8●
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● Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb−Free Device V(BR)DSS 30 V RDS(ON) MAX 4.0 mW @ 10 V 5.5 mW @ 4.5 V N−Channel D ID MAX 18 A
APPLICATIONS
● DC−DC Converters● Synchronous MOSFET
● Printers
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJA, t v 10 s (Note 1) Power Dissipation RqJA, t v 10 s(Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TA = 25°C TA = 70°C TA = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, Tstg IS EAS PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 15 12 1.66 11.1 8.9 0.91 18 15 2.5 60 −55 to 150 2.5 420 W A °C A mJ W A W A Unit V V A G S MARKIN...
