onsemi NTMS4816N
N-Channel Power MOSFET
| Part No. | NTMS4816N |
|---|---|
| Datasheet | NTMS4816N Download |
| Manufacturer |  onsemi |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low RDS(on) to Minimize Conduction Losses● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Disk Drives● DC−DC Converters
● Printers
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Steady TA = 25°C ID Current RqJA (Note 1) State TA = 70°C 9.0 A 7.2 Power Dissipation RqJA Steady TA = 25°C PD 1.37 W (Note 1) State Continuous Drain Steady TA = 25°C ID Current RqJA (Note 2) State TA = 70°C 6.8 A 5.4 Power Dissipation RqJA (Note 2) TA = 25°C PD 0.78 W Continuous Drain Steady TA = 25°C ID Current RqJA, t v 10 s State (Note 1) TA = 70°C 11 A 8.8 Power Dissipation Steady TA = 25°C RqJA, t v 10 s(Note 1) State Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanc...
