onsemi NTMS4872N
Power MOSFET
| Part No. | NTMS4872N |
|---|---|
| Datasheet | NTMS4872N Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
30 V, 10.2 A, N−Channel, SO−8●
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● Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Board Space This is a Pb−Free Device V(BR)DSS 30 V RDS(ON) MAX 13.5 mW @ 10 V 16.5 mW @ 4.5 V N−Channel D Value 30 ±20 8.0 6.4 PD ID PD ID 1.49 6.0 4.8 0.82 10.2 8.2 PD IDM TJ, Tstg IS EAS 2.4 56 −55 to 150 2.4 24.5 W A °C A mJ W A 1 ID MAX 10.2 A
APPLICATIONS
● Disk Drives● DC−DC Converters
● Printers
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC, t v 10 s (Note 1) Power Dissipation RqJC, t v 10 s(Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C TA = 25°C Steady State TA = 70°C TA = 25°C TC = 25°C TC = 70°C TC = 25°C TA = 25°C,...
