onsemi NTMS4N01R2
Power MOSFET
FEATURES
● High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency● Miniature SO−8 Surface Mount Package Saving Board Space; Mounting Information for the SO−8 Package is Provided
● IDSS Specified at Elevated Temperature
● Drain−to−Source Avalanche Energy Specified
● Diode Exhibits High Speed, Soft Recovery
● Pb−Free Package is Available
APPLICATIONS
● Power Management in Portable and Battery−Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular & Cordless TelephonesMAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.0 mW) Gate−to−Source Voltage − Continuous Thermal Resistance, Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Pulsed Drain Current (Note 4) Thermal Resistance, Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current...