onsemi NTMS5835NL
Power MOSFET
| Part No. | NTMS5835NL |
|---|---|
| Datasheet | NTMS5835NL Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low RDS(on)● Low Capacitance
● Optimized Gate Charge
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Pulsed Drain Current TA = 25°C Steady State TA = 70°C TA = 25°C TA = 70°C TA = 25°C t ≤10 s TA = 70°C TA = 25°C TA = 70°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 40 ±20 9.2 7.4 1.5 1.0 12 9.6 2.6 1.6 48 −55 to +150 20 69 37 260 A °C A mJ A °C 8 1 SO−8 CASE 751 STYLE 12 W A W G Unit V V A 40 V RDS(ON) MAX 10 mW @ 10 V 14 mW @ 4.5 V D ID MAX 12 A
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) S N−CHANNEL MOSFET MARKING DIAGRAM/ PIN ASSIGNMENT Source Source Source Gate 1 5835NL AYWWG G 8 Drain Drain Drain Drain Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Av...
