onsemi NTMSD3P102R2
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode
| Part No. | NTMSD3P102R2 |
|---|---|
| Datasheet | NTMSD3P102R2 Download |
| Manufacturer |  onsemi |
| Description | P-Channel Enhancement-Mode Power MOSFET and Schottky Diode |
| Buy | Stock & Price |
FEATURES
●ăHigh Efficiency Components in a Single SO-8 Package●ăHigh Density Power MOSFET with Low RDS(on), Schottky Diode with Low VF
●ăIndependent Pin-Outs for MOSFET and Schottky Die Allowing for Flexibility in Application Use
●ăLess Component Placement for Board Space Savings
●ăSO-8 Surface Mount Package, Mounting Information for SO-8 Package Provided
●ăPb-Free Packages are Available
APPLICATIONS
●ăDC-DC Converters●ăLow Voltage Motor Control
●ăPower Management in Portable and Battery-Powered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones MOSFET
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted). Rating Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ TA = 25°C Continuous Drain Current @ TA = 70°C Pulsed Drain Current (Note 4) VDSS VGS RqJA PD ID ID IDM -20 "20 V V 171 0.73 -2.34 -1.87 -8.0 °C/W W A A A The...
