onsemi NTMTS002N08MC
N-Channel Power MOSFET
FEATURES
● Small Footprint (8x8 mm) for Compact Design● Low RDS(on) to Minimize Conduction Losses
● Low QG and Capacitance to Minimize Driver Losses
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical
APPLICATIONS
● Power Tools, Battery Operated Vacuums● UAV/Drones, Material Handling
● BMS/Storage, Home Automation
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V Continuous Drain TC = 25°C ID Current RqJC (Note 2) Steady Power Dissipation State PD RqJC (Note 2) 229 A 208 W Continuous Drain Current RqJA (Notes 1, 2) Power Dissipation RqJA (Notes 1, 2) TA = 25°C ID Steady State PD 29 A 3.3 W Pulsed Drain Current TC = 25°C, tp = 10 ms IDM 3577 A Operating Junction and Storage Temperature Range TJ, Tstg − 55 to °C +150 Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 29 A, L = 3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) EAS 1261.5 mJ TL 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.