NTTFS5D1N06HL
Description
This N- Channel MOSFET is produced using onsemi’s advanced
MOSFET process that incorporates Shielded Gate technology. This process has been optimized to minimize on- state resistance and yet maintain superior switching performance with best in class soft body diode.
Features
- Shielded Gate MOSFET Technology
- Max r DS(on) = 5.2 m W at VGS = 10 V, ID = 16 A
- Max r DS(on) = 7.1 m W at VGS = 4.5 V, ID = 13 A
- Lowers Switching Noise/EMI
- MSL1 Robust Package Design
- 100% UIL Tested
- Ro HS pliant
Applications
- Primary DC- DC MOSFET
- Synchronous Rectifier in DC- DC and AC- DC
- Motor Drive
DATA SHEET .onsemi.
ELECTRICAL CONNECTION
N-Channel MOSFET
DDD D
Pin 1 1 234
Top
GSS S Pin 1
Bottom
WDFN8 (3.3x3.3, 0.65 P)
CASE 511DY
MARKING DIAGRAM
1N06 AYWW
1N06 A Y WW
= Device Code = Assembly Location = Year Code = Work Week Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data...
