NTTFS6H880NL Datasheet | onsemi

Features - Small Footprint (3.3 x 3.3 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low Capacitance to Minimize Driver Losses - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Symbol Value Unit Drain- to- Source Voltage VDSS Gate- to- Source Voltage 20 Continuous Drain Current Rq JC (Notes 1, 2, 3, 4) TC = 25C Steady TC = 100C Power Dissipation State TC = 25C Rq JC (Notes 1, 2, 3) TC = 100C Continuous Drain Current Rq JA (Notes 1, 3, 4) Power Dissipation Rq JA (Notes 1, 3) TA = 25C Steady TA = 100C State TA = 25C TA = 100C Pulsed Drain Current TA = 25C, tp = 10 ms Operating Junction and Storage Temperature Range TJ, Tstg - 55 to C +175 Source Current (Body...