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NTTFSSCH0D7N02X - N-Channel Power MOSFET

Key Features

  • Excellent Thermal Conduction by Advanced Source.
  • Down Center Gate Dual.
  • Cooling Package Technology (3.3 x 3.3 mm).
  • Ultra Low RDS(on) to Improve System Efficiency.
  • Low QG and Capacitance to Minimize Driving and Switching Losses.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

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DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel, Source Down Dual Cool) 33, WDFN9 25 V, 0.58 mW, 310 A NTTFSSCH0D7N02X Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3 x 3.3 mm) • Ultra Low RDS(on) to Improve System Efficiency • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • High Switching Frequency DC−DC Conversion • Synchronous Rectifier V(BR)DSS 25 V RDS(ON) MAX 0.58 mW @ VGS = 10 V 0.80 mW @ VGS = 4.