Datasheet Details
| Part number | NVBG022N120M3S |
|---|---|
| Manufacturer | onsemi |
| File Size | 311.63 KB |
| Description | SiC MOSFET |
| Datasheet |
 NVBG022N120M3S Datasheet
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Key Features
- Typ. RDS(on) = 22 mW @ VGS = 18 V.
- Ultra Low Gate Charge (QG(tot) = 142 nC).
- High Speed Switching with Low Capacitance (Coss = 146 pF).
- 100% Avalanche Tested.
- AEC.
- Q101 Qualified and PPAP Capable.
- These Devices are RoHS Compliant Typical.