NVBG022N120M3S
NVBG022N120M3S is SiC MOSFET manufactured by onsemi.
Features
- Typ. RDS(on) = 22 m W @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 142 n C)
- High Speed Switching with Low Capacitance (Coss = 146 p F)
- 100% Avalanche Tested
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Ro HS pliant
Typical Applications
- Automotive On Board Charger
- Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- 10/+22 V
Remended Operation Values TC < 175°C VGSop
- 3/+18 V of Gate- to- Source Voltage
Continuous Drain
Steady TC = 25°C
Current (Notes 2, 3)
State
Power Dissipation (Note 2)
441 W
Continuous Drain
Steady TC = 100°C
Current (Notes 2, 3)
State
Power Dissipation (Note 2)
220 W
Pulsed Drain Current (Note...
