NVH4L016N065M3S Description
Silicon Carbide (SiC) MOSFET - EliteSiC, 16 mohm 650 V, M3S, TO247-4L NVH4L016N065M3S.
NVH4L016N065M3S Key Features
- Typical RDS(on) = 16 mW @ VGS = 18 V
- Low Effective Output Capacitance
- Ultra Low Gate Charge
- 100% UIS Tested
- Qualified According to AECQ101
- This Device is Halide Free and RoHS pliant with Exemption 7a