• Part: NVH4L016N065M3S
  • Description: SiC MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 286.70 KB
Download NVH4L016N065M3S Datasheet PDF
onsemi
NVH4L016N065M3S
Features - Typical RDS(on) = 16 m W @ VGS = 18 V - Low Effective Output Capacitance - Ultra Low Gate Charge - 100% UIS Tested - Qualified According to AECQ101 - This Device is Halide Free and Ro HS pliant with Exemption 7a, Pb-Free 2LI (on second level interconnection) Applications - Automotive On and Off Board Charger - Automotive DC-DC Converter for EV-HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current Power Dissipation Continuous Drain Current Power Dissipation Pulsed Drain Current (Note 1) Continuous Source-Drain Current (Body Diode) Pulsed Source-Drain Current (Body Diode) (Note 1) Single Pulse Avalanche Energy (Note 2) TC = 25 °C TC = 100 °C TC = 25 °C tp = 100 ms TC = 25 °C VGS = - 3 V TC = 100 °C VGS = - 3 V TC = 25 °C VGS = - 3 V, tp = 100 ms ILPK = 60 A, L = 0.1 m H VDSS - 10/+22.6...