NVMFS6H800NL
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS6H800NLWF
- Wettable Flank Option for Enhanced Optical
Inspection
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
V(BR)DSS 80 V
RDS(ON) MAX 1.9 m W @ 10 V 2.4 m W @ 4.5 V
ID MAX 224 A
D (5,6)
G (4)
S (1,2,3) N- CHANNEL MOSFET
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain Current Rq JC (Notes 1, 3)
Steady TC = 25°C
State
TC = 100°C
Power Dissipation Rq JC (Note 1)
TC = 25°C
TC = 100°C
214 W 107
Continuous Drain Current Rq JA (Notes 1, 2, 3)
Steady TA =...
