onsemi NVMS4816N
Power MOSFET
| Part No. | NVMS4816N |
|---|---|
| Datasheet | NVMS4816N Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low RDS(on) to Minimize Conduction Losses● Low Capacitance to Minimize Driver Losses
● Optimized Gate Charge to Minimize Switching Losses
● AEC−Q101 Qualified and PPAP Capable − NVMS4816N
● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● Disk Drives● DC−DC Converters
● Printers
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Steady State Power Dissipation (Note 1) RqJA Steady State TA = 25°C TA = 70°C TA = 25°C VDSS VGS ID PD 30 ±20 9.0 7.2 1.37 Continuous Drain Current RqJA (Note 2) Steady State TA = 25°C TA = 70°C ID 6.8 5.4 Power Dissipation (Note 2) RqJA TA = 25°C PD 0.78 Continuous Drain C(Nuortreen1t)RqJA, t v 10 s Steady State TA = 25°C TA = 70°C ID 11 8.8 Power Dissipation RqJA, t v 10 s(Note 1) Steady State TA = 25°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single P...
