• Part: NVMYS011N04C
  • Description: N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: onsemi
  • Size: 306.88 KB
Download NVMYS011N04C Datasheet PDF
onsemi
NVMYS011N04C
Features - Small Footprint (5x6 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - LFPAK4 Package, Industry Standard - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Parameter Value Unit VDSS Drain- to- Source Voltage VGS Gate- to- Source Voltage 20 Continuous Drain Current Rq JC (Notes 1, 2, 3) Steady TC = 25C State TC = 100C PD Power Dissipation Rq JC (Notes 1, 2) TC = 25C TC = 100C 9.1 Continuous Drain Current Rq JA (Notes 1, 2, 3) Steady TA = 25C State TA = 100C PD Power Dissipation Rq JA (Notes 1, 2) TA =...