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MOSFET – Power, Single N-Channel
40 V, 12 mW, 35 A
NVMYS011N04C
Features
Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses LFPAK4 Package, Industry Standard AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Symbol
Parameter
Value Unit
VDSS Drain−to−Source Voltage
40
V
VGS Gate−to−Source Voltage
20
V
ID
Continuous Drain
Current RqJC
(Notes 1, 2, 3)
Steady TC = 25C
35
A
State
TC = 100C
20
PD Power Dissipation RqJC (Notes 1, 2)
TC = 25C
28
W
TC = 100C 9.1
ID
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady TA = 25C
13
A
State
TA = 100C
9.
NVMYS011N04C Datasheet
