NVTFS6H850N
Features
- Small Footprint (3.3 x 3.3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- NVTFS6H850NWF
- Wettable Flanks Product
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
±20
Continuous Drain
Current Rq JC (Notes 1, 2, 3, 4)
Steady TC = 25°C
State
TC = 100°C
Power Dissipation Rq JC (Notes 1, 2, 3)
TC = 25°C
TC = 100°C
Continuous Drain
Current Rq JA (Notes 1 & 3, 4)
Steady TA = 25°C
State
TA = 100°C
107 W
Power Dissipation Rq JA (Notes 1, 3)
TA =...
