onsemi PZT3904T1G
NPN Silicon General Purpose Transistor
FEATURES
● S Prefix for Automotive and OtherAPPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 200 mAdc Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation (Note 1) TA = 25C Thermal Resistance Junction−to−Ambient (Note 1) PD RqJA Thermal Resistance Junction−to−Lead #4 RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR− 4 with 1 oz and 713 mm2 of copper area. Max 1.5 12 83.3 35 −55 to +150 Unit W mW/C C/W C/W C DATA SHEET COLLECTOR 2, 4...