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PZT3904T1G Datasheet PDF

onsemi PZT3904T1G

NPN Silicon General Purpose Transistor

Part No. PZT3904T1G
Datasheet PZT3904T1G Download
Manufacturer
onsemi
Description NPN Silicon General Purpose Transistor
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PZT3904T1G datasheet page 1 preview

FEATURES

● S Prefix for Automotive and Other

APPLICATIONS

Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage VCBO 60 Vdc Emitter −Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 200 mAdc Stresses exceeding those listed in the

MAXIMUM RATINGS

table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation (Note 1) TA = 25C Thermal Resistance Junction−to−Ambient (Note 1) PD RqJA Thermal Resistance Junction−to−Lead #4 RqJA Junction and Storage Temperature Range TJ, Tstg 1. FR− 4 with 1 oz and 713 mm2 of copper area. Max 1.5 12 83.3 35 −55 to +150 Unit W mW/C C/W C/W C DATA SHEET COLLECTOR 2, 4...
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