PZT3906T1G
PZT3906T1G is General Purpose PNP Silicon Transistor manufactured by onsemi.
Features
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous
VCEO VCBO VEBO
- 40
- 40
- 5.0
- 200
Vdc Vdc Vdc m Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation (Note 1) TA = 25°C
Thermal Resistance Junction- to- Ambient (Note 1)
PD Rq JA
12 m W/°C
83.3 °C/W
Thermal Resistance Junction- to- Lead #4 Junction and Storage Temperature Range
Rq JA TJ, Tstg
- 55 to +150
°C/W °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR- 4 with 1 oz and 713 mm2 of copper area.
.onsemi.
COLLECTOR 2, 4
1 BASE
3 EMITTER
MARKING DIAGRAM
SOT- 223 CASE 318E
AYW 2A...
