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PZTA96ST1G Datasheet PDF

onsemi PZTA96ST1G

High Voltage Transistor

Part No. PZTA96ST1G
Datasheet PZTA96ST1G Download
Manufacturer
onsemi
Description High Voltage Transistor
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PZTA96ST1G datasheet page 1 preview

FEATURES

● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit Collector−Emitter Voltage VCEO − 450 Vdc Collector−Base Voltage VCBO − 450 Vdc Emitter−Base Voltage VEBO − 5.0 Vdc Collector Current IC − 500 mAdc Total Power Dissipation Up to TA = 25°C (Note 1) PD W 1.5 Storage Temperature Range Tstg − 65 to +150 °C Junction Temperature TJ 150 °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal
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