onsemi PZTA96ST1G
High Voltage Transistor
FEATURES
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMAXIMUM RATINGS
Rating Symbol Value Unit Collector−Emitter Voltage VCEO − 450 Vdc Collector−Base Voltage VCBO − 450 Vdc Emitter−Base Voltage VEBO − 5.0 Vdc Collector Current IC − 500 mAdc Total Power Dissipation Up to TA = 25°C (Note 1) PD W 1.5 Storage Temperature Range Tstg − 65 to +150 °C Junction Temperature TJ 150 °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal