onsemi QSD124
The QSD123/124 is a phototransistor encapsulatedin an infrared transparent, black T−1 3/4 package.| Part No. | QSD124 |
|---|---|
| Datasheet | QSD124 Download |
| Manufacturer |  onsemi |
| Description | Plastic Silicon Infrared Phototransistor |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● PNPN Silicon Phototransistor● Package Type: T−1 3/4
● Matched Emitter: QED12X / QED22X / QED23X
● Narrow Reception Angle: 24°C
● Daylight Filter
● Package Material and Color: Black Epoxy
● High Sensitivity
● This is a Pb−Free Device
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Value Unit TOPR TSTG TSOL−I Operating Temperature Storage Temperature Soldering Temperature (Iron) (Note 2), (Note 3), (Note 4) −40 to +100 °C −40 to +100 °C 240 for 5 s °C TSOL−F Soldering Temperature (Flow) (Note 2), (Note 3) 260 for 10 s °C VCE Collector−Emitter Voltage 30 V VEC Emitter−Collector Voltage 5 V PD Power Dissipation (Note 1) 100 mW Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents.
