onsemi QSE113
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.| Part No. | QSE113 |
|---|---|
| Datasheet | QSE113 Download |
| Manufacturer |  onsemi |
| Description | Plastic Silicon Infrared Phototransistor |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
● NPN Silicon Phototransistor● Package Type: Sidelooker
● Medium Wide Reception Angle, 50°
● Package Material and Color: Black Epoxy
● Matched Emitter: QEE113
● Daylight Filter
● High Sensitivity
● Blue Dot Marking on the Top Side
● This is a Pb−Free Device
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Symbol Parameter Value Unit TOPR TSTG TSOL−I Operating Temperature Storage Temperature Soldering Temperature (Iron) (Note 2), (Note 3), (Note 4) −40 to +100 °C −40 to +100 °C 240 for 5 s °C TSOL−F Soldering Temperature (Flow) (Note 2), (Note 3) 260 for 10 s °C VCE Collector−Emitter Voltage 30 V VEC Emitter−Collector Voltage 5 V PD Power Dissipation (Note 1) 100 mW Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended.
