onsemi RHRG30120
The RHRG30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications.| Part No. | RHRG30120 |
|---|---|
| Datasheet | RHRG30120 Download |
| Manufacturer |  onsemi |
| Description | Hyperfast Diode |
| Buy | Stock & Price |
DESCRIPTION
Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.FEATURES
● Hyperfast Recovery trr = 85 ns (@ IF = 30 A)● Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
● 1200 V Reverse Voltage and High Reliability
● Avalanche Energy Rated
● This Device is Pb−Free and is RoHS Compliant
APPLICATIONS
● Switching Power Supplies● Power Switching Circuits
● General Purpose
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 80°C) Repetitive Peak Surge Current (Square Wave, 20 kHz) VRRM 1200 V VRWM 1200 V VR 1200 V IF(AV) 30 A IFRM 60 A Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60 Hz) IFSM 300 A Maximum Power Dissipation Avalanche Energy (See Figures 7 and 8) PD EAVL 125 W 30 mJ Operating and Storage Temperature TSTG, TJ −65 to 175 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device.
