onsemi S2SC4617G
NPN Silicon General Purpose Amplifier Transistor
| Part No. | S2SC4617G |
|---|---|
| Datasheet | S2SC4617G Download |
| Manufacturer |  onsemi |
| Description | NPN Silicon General Purpose Amplifier Transistor |
| Buy | Stock & Price |
FEATURES
● Reduces Board Space● High hFE, 210 −460 (typical)
● Low VCE(sat), < 0.5 V
● Available in 8 mm, 7 inch/3000 Unit Tape and Reel
● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*
MAXIMUM RATINGS
(TJ = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 50 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 5.0 Vdc Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation (Note 1) PD 125 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 ~ + 150 °C 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
