onsemi SBSS84L
P-Channel Power MOSFET
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current Continuous @ TA = 25°C Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range VDSS −50 Vdc VGS ± 20 Vdc mA ID −130 IDM −520 PD 225 mW TJ, Tstg − 55 to °C 150 Thermal Resistance − Junction−to−Ambient Thermal Resistance − Junction−to−Ambient (Note 1) RqJA RqJA 556 377.2 °C/W °C/W Maximum Lead Temperature for Soldering TL Purposes, for 10 seconds 260 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.