onsemi SMMBT5551LT1G
High Voltage Transistors
| Part No. | SMMBT5551LT1G |
|---|---|
| Datasheet | SMMBT5551LT1G Download |
| Manufacturer |  onsemi |
| Description | High Voltage Transistors |
| Buy | Stock & Price |
FEATURES
COLLECTOR 3 1 BASE 2 EMITTER● AEC−Q101 Qualified and PPAP Capable
● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique● Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Collector − Emitter Voltage MMBT5550 MMBT5551, SMMBT5551 MMBT5550 MMBT5551, SMMBT5551 Symbol VCEO Value 140 160 160 180 6.0 600 > 8000 > 400 Unit Vdc 1 Vdc 2 SOT−23 (TO−236) CASE 318 STYLE 6 3 MARKING DIAGRAM Collector − Base Voltage VCBO x1x M G G 1 Emitter − Base Voltage Collector Current − Continuous Electrostatic Discharge Human Body Model Machine Model VEBO IC ESD Vdc mAdc V THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4...
