onsemi STD110N02R
N-Channel Power MOSFET
FEATURES
● Planar HD3e Process for Fast Switching Performance● Low RDS(on) to Minimize Conduction Loss
● Low Ciss to Minimize Driver Loss
● Low Gate Charge
● Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters
● S Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current − Continuous @ TC = 25°C, Chip − Continuous @ TC = 25°C Limited by Package − Continuous @ TA = 25°C Limited by Wires − Single Pulse (tp = 10 ms) Thermal Resistance − Junction−to−Ambient (Note 1) − Total Power Dissipation @ TA = 25°C − Drain Current − Continuous @ TA = 25°C Thermal Resistance − Junction−to−Ambient (Note 2) − Total Power Dissi...