STMFSC017N15M5 Description
This N−Channel MOSFET is produced using onsemi’s advanced PowerTrench® process that incorporates Shielded Gate technology. Advancements in both silicon and Dual Cool® package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to− Ambient.
STMFSC017N15M5 Key Features
- Shielded Gate MOSFET Technology
- Dual CoolTM Top Side Cooling DFN8 Package
- Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A
- Max rDS(on) = 25 mW at VGS = 6 V, ID = 7.8 A
- High Performance Technology for Extremely Low rDS(on)
- 100% UIL Tested
- RoHS pliant
STMFSC017N15M5 Applications
- Primary MOSFET in DC − DC Converters