STMFSC017N15M5
Description
This N- Channel MOSFET is produced using onsemi’s advanced
Power Trench® process that incorporates Shielded Gate technology. Advancements in both silicon and Dual Cool® package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance by extremely low Junction- to- Ambient thermal resistance.
Features
- Shielded Gate MOSFET Technology
- Dual Cool TM Top Side Cooling DFN8 Package
- Max r DS(on) = 17 m W at VGS = 10 V, ID = 9.3 A
- Max r DS(on) = 25 m W at VGS = 6 V, ID = 7.8 A
- High Performance Technology for Extremely Low r DS(on)
- 100% UIL Tested
- Ro HS pliant
Applications
- Primary MOSFET in DC
- DC Converters
- Secondary Synchronous Rectifier
- Load Switch
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings
Unit
Drain to Source Voltage
Gate to Source Voltage
±20
Drain Current:
Continuous, TC = 25°C
Continuous, TA = 25°C (Note 1a)
Pulsed (Note...
