onsemi SVD5804N
Power MOSFET
| Part No. | SVD5804N |
|---|---|
| Datasheet | SVD5804N Download |
| Manufacturer |  onsemi |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low RDS(on)● High Current Capability
● Avalanche Energy Specified
● NTDV, STDV and SVD Prefix for Automotive and Other
APPLICATIONS
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable● These Devices are Pb−Free and are RoHS Compliant
APPLICATIONS
● CCFL Backlight● DC Motor Control
● Class D Amplifier
● Power Supply Secondary Side Synchronous Rectification
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) VGS ±30 V Continuous Drain Current (RqJC) (Note 1) Power Dissipation (RqJC) (Note 1) TC = 25°C ID Steady TC = 100°C State TC = 25°C PD 69 A 49 71 W Pulsed Drain Current tp = 10 ms IDM 125 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C 175 Source Current (Body Diode) IS 60 A Single Pulse Drain−to−Source Avalanche EAS Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,...
