onsemi T2322B
Sensitive Gate Triacs Silicon Bidirectional Thyristors
FEATURES
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● Very High Gate Sensitivity Low On-State Voltage at High Current Levels Glass-Passivated Chip for Stability Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability Pb−Free Package is Available* TRIACS 2.5 AMPERES RMS 200 VOLTS MT2 G MT1
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (Note 1) (TJ = 25 to 110°C, Gate Open) On-State RMS Current (TC = 70°C) (Full Cycle Sine Wave 50 to 60 Hz) Peak Non−Repetitive Surge Current (One Full Cycle, Sine Wave 60 Hz, TC = 70°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 10 ms, TC = 70°C) Average Gate Power (t = 8.3 ms, TC = 70°C) Peak Gate Current (Pulse Width = 10 ms, TC = 70°C) Operating Junction Temperature Range Storage Temperature Range Mounting Torque (6-32 Screw) (Note 2) Symbol VDRM, VRRM IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg − Value 200 2.5 25 2.6 10 0.5 0.5 −40 to +110 −40 to +150 8.0 Unit V A 3 A A2s W W A °C °C in. lb.