onsemi T2800D
Silicon Bidirectional Thyristors
| Part No. | T2800D |
|---|---|
| Datasheet | T2800D Download |
| Manufacturer |  onsemi |
| Description | Silicon Bidirectional Thyristors |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off–State Voltage(1) (TJ = –40 to +125°C, Gate Open) On–State RMS Current (All Conduction Angles, TC = +80°C) Peak Non–Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = +80°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width = 10 µs, TC = +80°C) Average Gate Power (t = 8.3 ms, TC = +80°C) Peak Gate Current (Pulse Width = 10 µs, TC = +80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM IT(RMS) ITSM Value 400 8.0 100 Unit Volts Amps Amps 4 TRIACS 8 AMPERES RMS 400 VOLTS MT2 G MT1 I2t PGM PG(AV) IGM TJ Tstg 40 16 0.35 4.0 – 40 to +125 – 40 to +150 A2s Watts Watt Amps 1 2 3 TO–220AB CASE 221A STYLE 4 PIN ASSIGNMENT °C °C 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
