onsemi TF262TH
The TF262TH is classified by IDSS as follows : (unit : µA) Marking L4 L5 Rank 4 5 IDSS 140 to 240 210 to 350 min --20 --0.2 140* 0.5 Ratings typ --0.5 0.95 3.5 0.65 max --1.0 350* Unit V V µA mS pF pF --1.5 --0.8 0.5 --112 --2.0 --1.0 dB dB dB % dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.| Part No. | TF262TH |
|---|---|
| Datasheet | TF262TH Download |
| Manufacturer |  onsemi |
| Description | N-Channel JFET |
| Buy | Stock & Price |
FEATURES
● Low Output Noise Voltage : VNO= --112dB typ. (VCC=2V, RL=2.2kΩ, Cin=5pF)● Ultrasmall Package Facilitates Miniaturization in End Products : 1.4mm × 1.2mm × 0.34mm
● Especially Suited for use in electret condenser microphone for audio equipments and telephones
● Adoption of FBET process
● Halogen Free compliance Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Conditions Gate to Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VGDO IG ID PD Tj Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Packing Type : TL Electrical Connection 3 TL LOT No. LOT No. Marking 3 LR A N...
