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TF408 Datasheet PDF

onsemi TF408

The TF408 is classified by IDSS as follows : (unit : mA) Rank 2 3 IDSS 0.6 to 1.5 1.2 to 3.0 Ordering Information Device TF408-2-TL-H TF408-3-TL-H Package USFP USFP Shipping 10,000pcs./reel 10,000pcs./reel min --30 Ratings typ --0.18 0.6* 3.0 --0.60 5.0 4 1.1 max --1.0 --1.5 3.0* Unit V nA V mA mS pF pF memo Pb Free and Halogen Free Drain Current, ID -- mA ID -- VDS 3.0 2.5 2.0 VGS=0V 1.5 --0.1V 1.0 --0.2V --0.3V 0.5 --0.4V 0 01234 3.5 Drain-to-SIoDurce--VoVltaGgeS, VDS -- V VDS=10V 3.0 5 IT16770 2.5 IDSS =3.0mA 2.0 1.5 2.0mA 1.0 0.5 0 --1.0 1.0mA --0.8 --0.6 --0.4 --0.2 0 Gate-to-Source...
Part No. TF408
Datasheet TF408 Download
Manufacturer
onsemi
Description N-Channel JFET
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TF408 datasheet page 1 preview

APPLICATIONS

● Low-Frequency general-purpose amplifier, impedance conversion, infrared sensor applications

FEATURES

● Ultrasmall package facilitates miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)
● Small IGSS : max --1.0nA (VGS= --20V, VDS=0V)
● Small Ciss : typ 4pF (VDS= 10V, VGS=0V, f=1MHz)
● Halogen free compliance Specifications

ABSOLUTE MAXIMUM RATINGS

at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VDSX VGDS IG ID PD Tj Storage Temperature Tstg Conditions Ratings 30 --30 10 10 30 150 --55 to +150 Unit V V mA mA mW °C °C Stresses exceeding

MAXIMUM RATINGS

may damage the device.

MAXIMUM RATINGS

are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. LOT No. LOT No. Package Dimensions unit : mm (typ) 7055-003 0.6 0.2...
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