onsemi TIG056BF
N-Channel IGBT
FEATURES
● Low-saturation voltage● Ultrahigh speed switching
● Enhansment type
● Protection diode in Specifications
ABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Collector to Emitter Voltage Gate to Emitter Voltage Collector Current (Pulse) Allowable Power Dissipation Channel Temperature VCES VGES ICP PD Tch Storage Temperature Tstg Conditions VGE=15V, CM=2000μF Tc=25°C Ratings 430 ±33 240 30 150 -55 to +150 Unit V V A W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7528-002 10.16 3.18 4.7 2.54 TIG056BF-1E Ordering & Package Information Device Package Shipping TIG056BF-1E TO-220F-3FS 50 SC-67 pcs./magazine memo Pb-Free Marking Electrical Connection 2 3.3 15.87 6.68 15.8 3.23 1.47 MAX 0.8 123 2.54 2.54 12.98 2.76 0.5 1 : Gate 2 : Collector 3 : Emitter TO-220F-3FS TIG056 LOT No.