onsemi TIG067SS
Single N-Channel IGBT
| Part No. | TIG067SS |
|---|---|
| Datasheet | TIG067SS Download |
| Manufacturer |  onsemi |
| Description | Single N-Channel IGBT |
| Buy | Stock & Price |
FEATURES
● Low-saturation Voltage● Enhancement Type
● High Speed Switching
● 4.0V Drive
● Built-in Gate-to-Emitter Protection Diode
● Pb-Free, Halogen Free and RoHS Compliance
APPLICATIONS
● Light-controlling Flash SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Collector-to-Emitter Voltage (DC) Collector-to-Emitter Voltage (Pulse) Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Allowable Power Dissipation Channel Temperature VCES VCESP VGES VGESP ICP dv / dt PD Tch Storage Temperature Tstg Conditions PW≤1ms PW≤1ms CM=600μF VCE≤320V, starting Tch=25°C When mounted on FR4 substrate (11,680mm2×1.6mm) Ratings 400 450 ±6 ±8 150 1500 1.2 150 -40 to +150 Unit V V V V A V / μs W °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
