onsemi TIG074E8
N-Channel IGBT
FEATURES
● Low-saturation voltage● Enhansment type
● Mounting Height 0.9mm, Mounting Area 8.12mm2
● Halogen free compliance
● Low voltage drive (2.5V)
● Built-in Gate to Emitter protection diode
● dv / dt guarantee* Application
● Light-Controlling Flash
APPLICATIONS
SpecificationsABSOLUTE MAXIMUM RATINGS
at Ta=25°C Parameter Symbol Conditions P-channel Collector to Emitter Voltage Gate to Emitter Voltage (DC) Gate to Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector to Emitter dv / dt Channel Temperature VCES VGES VGES ICP dv / dt Tj PW≤1ms VGE=2.5V, CM=200μF Turn off Ic=150A, VCE≤320V, starting Tch=25°C 400 ±4 ±5 150 400 150 Storage Temperature Tstg -40 to +150 * : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), will be 100% screen-detected in the circuit shown as Fig. 1. Unit V V V A V / μs °C °C Stresses exceedingMAXIMUM RATINGS
may damage the device.MAXIMUM RATINGS
are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.