onsemi TIP100
Silicon NPN Transistor
FEATURES
● High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc● Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107
● Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc
● Monolithic Construction with Built−in Base−Emitter Shunt Resistors
● These Devices are Pb−Free and are RoHS Compliant DATA SHEET 4 1 2 3 1. Base 2. Collector 3. Emitter 4. Collector TO−220AB CASE 221A STYLE 1 DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60−80−100 VOLTS, 80 WATTS MARKINGDIAGRAM TIP10xG AYWW TIP10x x A Y WW G = Device Code = 0, 1, 2, 5, 6, or 7 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. © Semiconductor Components Industries, LLC, 2014 1 June, 2024 − Rev. 16 Publication Order Number: TIP100/D TIP100, TIP101, TIP...