onsemi TIP131G
Silicon Power Transistors
| Part No. | TIP131G |
|---|---|
| Datasheet | TIP131G Download |
| Manufacturer |  onsemi |
| Description | Silicon Power Transistors |
| Buy | Stock & Price |
FEATURES
● High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc● Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) − TIP131 = 100 Vdc (Min) − TIP132, TIP137
● Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc
● Monolithic Construction with Built−In Base−Emitter Shunt Resistors
● Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating TIP132 Symbol TIP131 TIP137 Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak VCEO VCB VEB IC 80 100 Vdc 80 100 Vdc 5.0 Vdc 8.0 Adc 12 Base Current Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TA = 25°C Operating and Storage Junction, Temperature Range IB PD PD TJ, Tstg 300 70 2.0 – 65 to + 150 mAdc W W °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.78 °C/W Thermal Resistance, Junction−to−Ambient RqJA 63.5 °C/W Stresses exceedingMAXIMUM RATINGS
may damage the device.
