onsemi TIP33B
COMPLEMENTARY SILICON POWER TRANSISTORS
| Part No. | TIP33B |
|---|---|
| Datasheet | TIP33B Download |
| Manufacturer |  onsemi |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Symbol VCEO VCB VEB IC IB TIP33B TIP34B 80 V 80 V TIP33C TIP34C 100 V 100 V Unit Vdc Vdc Vdc Adc Adc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage 5.0 10 15 Collector Current — Continuous Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C 3.0 PD 80 0.64 Watts W/_C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 100 VOLTS 80 WATTS _C THERMAL CHARACTERISTICS Characteristic CASE 340D–02 TO–218AC Symbol RθJC RθJA Max Unit Thermal Resistance, Junction to Case 1.56 35.7 _C/W _C/W Junction–To–Free–Air Thermal Resistance (1) Pulse Test: Pulse Width = 10 ms, Duty Cycle 10%. 500 200 hFE , DC CURRENT GAIN 100 50 20 10 5.0 0.1 1.0 IC, COLLECTOR CURRENT (A) 10 VCE = 4.0 V TJ = 25°C NPN PNP Figure 1. DC Current Gain Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 © Motorola, Inc. 1996 Motorola Bi...
