onsemi TIP33C
NPN High-Power Transistors
FEATURES
● ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V● Epoxy Meets UL 94 V−0 @ 0.125 in
● These Devices is Pb−Free*
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous − Peak (Note 1) Symbol VCEO VCBO VEBO IC Value 100 100 5.0 10 15 Unit Vdc Vdc Vdc Adc Apk Base Current − Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C IB 3.0 Adc PD 80 Watts 0.64 W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to °C +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.56 °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. DATA SHEET TO−2...