UF4C120053K3S
Description
The UF4C120053K3S is a 1200 V, 53 m W G4 Si C FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si super-junction devices. Available in the TO247-3 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-resistance RDS(on): 53 m W
- Maximum Operating Temperature of 175 C
- Excellent Reverse Recovery: Qrr = 117 n C
- Low Body Diode VFSD: 1.28 V
- Low Gate Charge: QG = 37.8 n C
- Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive
- Low Intrinsic Capacitance
- ESD Protected: HBM Class 2 and CDM Class C3
- This Device is Pb-Free, Halogen Free and is Ro HS pliant
Typical...
