UF4C120053K3S Overview
The UF4C120053K3S is a 1200 V, 53 mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices.
UF4C120053K3S Key Features
- On-resistance RDS(on): 53 mW
- Maximum Operating Temperature of 175 C
- Excellent Reverse Recovery: Qrr = 117 nC
- Low Body Diode VFSD: 1.28 V
- Low Gate Charge: QG = 37.8 nC
- Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive
- Low Intrinsic Capacitance
- ESD Protected: HBM Class 2 and CDM Class C3
- This Device is Pb-Free, Halogen Free and is RoHS pliant