UJ3C120150K3S Datasheet | onsemi

Silicon Carbide (Si C) Cascode JFET - Elite Si C, Power N-Channel, TO247-3, 1200 V, 150 mohm Description This Si C FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si super-junction devices. Available in the TO247-3 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive. Features - Typical On-resistance RDS(on),typ: 150 m W - Maximum Operating Temperature of 175 C - Excellent Reverse Recovery - Low Gate Charge - Low Intrinsic Capacitance - ESD Protected: HBM Class 2 - This Device is Pb-Free, Halogen Free and is Ro HS pliant Typical Applications - EV Charging - PV Inverters - Switch Mode Power Supplies - Power Factor Correction Modules - Motor Drives - Induction Heating DATA SHEET .onsemi. TO247-3 15.90x20.96x5.03, 5.44P CASE 340AK MARKING DIAGRAM UJ3C120150K3S AYYWW ZZZ UJ3C120150K3S A YY WW ZZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot ID PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet.  Semiconductor ponents Industries, LLC, 2024 April, 2025 - Rev....