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UJ3D06520TS - 650V SiC Diode

General Description

Merged-PiN-Schottky (MPS) diodes.

With zero reverse recovery charge and 175 °C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

Key Features

  • 175 °C Maximum Operating Junction Temperature.
  • Easy Paralleling.
  • Extremely Fast Switching not Dependent on Temperature.
  • No Reverse or Forward Recovery.
  • Enhanced Surge Current Capability, MPS Structure.
  • Excellent Thermal Performance, Ag Sintered.
  • 100% UIS Tested.
  • This Device is Pb-Free, Halogen Free and is ROHS Compliant Typical.

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Full PDF Text Transcription (Reference)

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Silicon Carbide (SiC) Diode – EliteSiC, TO220-2, 20 A, 650 V SiC Merged PiN-Schottky (MPS) Diode UJ3D06520TS Description onsemi offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 °C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.