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UJ3D1210TS Datasheet 1200v Sic Diode

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) Diode – EliteSiC, TO220-2, 10 A, 1200 V SiC Merged PiN-Schottky (MPS).

General Description

onsemi offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes.

With zero reverse recovery charge and 175 °C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

Key Features

  • Maximum Operating Temperature of 175 °C.
  • Easy Paralleling.
  • Extremely Fast Switching not Dependent on Temperature.
  • No Reverse or Forward Recovery.
  • Enhanced Surge Current Capability, MPS Structure.
  • Excellent Thermal Performance, Ag Sintered.
  • This Device is Pb-Free, Halogen Free and is ROHS Compliant Typical.

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