Datasheet4U Logo Datasheet4U.com

UJ3N065025K3S - SiC JFET

Datasheet Summary

Description

transistors.

This Series Exhibits Ultra-low on resistance (RDS(ON)) and Gate charge (QG) allowing for Low Conduction and Switching loss.

Features

  • Typical On-Resistance RDS(on), typ of 25 mW.
  • Voltage Controlled.
  • Maximum Operating Temperature of 175 C.
  • Extremely Fast Switching not Dependent on Temperature.
  • Low Gate Charge.
  • Low Intrinsic Capacitance.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

📥 Download Datasheet

Datasheet preview – UJ3N065025K3S

Datasheet Details

Part number UJ3N065025K3S
Manufacturer onsemi
File Size 308.02 KB
Description SiC JFET
Datasheet download datasheet UJ3N065025K3S Datasheet
Additional preview pages of the UJ3N065025K3S datasheet.

📁 Similar Datasheet

Other Datasheets by onsemi

Full PDF Text Transcription

Click to expand full text
Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, TO247-3, 650 V, 25 mohm UJ3N065025K3S Description onsemi offers the High-Performance G3 SiC normally-On JFET transistors. This Series Exhibits Ultra-low on resistance (RDS(ON)) and Gate charge (QG) allowing for Low Conduction and Switching loss. The device Normally-On Characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.
Published: |