UJ4C075018K4S
Description
The UJ4C075018K4S is a 750 V, 18 m W G4 Si C FET. It is based on unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si super-junction devices. Available in the TO247-4 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
Features
- On-Resistance RDS(on) : 18 m W (typ)
- Operating Temperature: 175 C (max)
- Excellent Reverse Recovery: Qrr = 102 n C
- Low Body Diode VFSD: 1.14 V
- Low Gate Charge: QG = 37.8 n C
- Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive
- Low Intrinsic Capacitance
- ESD Protected: HBM Class 2
- TO247-4 Package for Faster Switching, Clean Gate Waveforms
- This Device is Pb-Free,...
