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UJ4C075018K4S - 750V SiC Cascode JFET

Datasheet Summary

Description

The UJ4C075018K4S is a 750 V, 18 mW G4 SiC FET.

unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

  • On-Resistance RDS(on) : 18 mW (typ).
  • Operating Temperature: 175 C (max).
  • Excellent Reverse Recovery: Qrr = 102 nC.
  • Low Body Diode VFSD: 1.14 V.
  • Low Gate Charge: QG = 37.8 nC.
  • Threshold Voltage VG(th): 4.8 V (typ) Allowing 0 to 15 V Drive.
  • Low Intrinsic Capacitance.
  • ESD Protected: HBM Class 2.
  • TO247-4 Package for Faster Switching, Clean Gate Waveforms.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Datasheet Details

Part number UJ4C075018K4S
Manufacturer onsemi
File Size 675.18 KB
Description 750V SiC Cascode JFET
Datasheet download datasheet UJ4C075018K4S Datasheet
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Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO247‐4, 750 V, 18 mohm UJ4C075018K4S Description The UJ4C075018K4S is a 750 V, 18 mW G4 SiC FET. It is based on unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super-junction devices. Available in the TO247-4 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.
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