• Part: UMZ1NT1G
  • Description: Complementary Dual General Purpose Amplifier Transistor
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 172.26 KB
Download UMZ1NT1G Datasheet PDF
onsemi
UMZ1NT1G
Features - High Voltage and High Current: VCEO = 50 V, IC = 200 m A - High h FE: h FE = 200X400 - Moisture Sensitivity Level: 1 - ESD Rating - Human Body Model: 3A ESD Rating - Machine Model: C - NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector- Base Voltage V(BR)CBO Collector- Emitter Voltage V(BR)CEO Emitter- Base Voltage V(BR)EBO Collector Current - Continuous THERMAL CHARACTERISTICS Vdc Vdc Vdc m Adc Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25°C 187 (Note 1) m W 256 (Note 2) 1.5 (Note 1) m W/°C 2.0 (Note...