onsemi VEC2616
Power MOSFET
FEATURES
● Low On-Resistance● 4V drive
● Low-Profile Package
● Complementary N-Channel and P-Channel MOSFET
● ESD Diode-Protected Gate
● Pb-Free, Halogen Free and RoHS compliance Typical
APPLICATIONS
● Motor Driver SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol N-Channel P-Channel Unit Drain to Source Voltage VDSS 60 −60 V Gate to Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 3 −2.5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 12 −10 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) 1unit Total Dissipation When mounted on ceramic substrate (